KPA1871 - MOS Field Effect Transistor
KPA1871 Features
* Can be driven by a 2.5-V power source Low on-state resistance RDS(on)1 = 26 m RDS(on)2 = 27 m RDS(on)3 = 38 m TYP. (VGS = 4.5 V, ID = 3.0 A) TYP. (VGS = 4.0 V, ID = 3.0 A) TYP. (VGS = 2.5 V, ID = 3.0 A) TSSOP-8 Unit: mm Built-in G-S protection diode against ESD 1 : Drain1 2 : Source1 3 : Source1 4
