KPA1890 - MOS Field Effect Transistor
KPA1890 Features
* Can be driven by a 4.0-V power source Low on-state resistance N-channel RDS(on)1 = 27 m RDS(on)2 = 37 m RDS(on)3 = 47 m P-channel RDS(on)1 = 37 m RDS(on)2 = 56 m RDS(on)3 = 64 m MAX. (VGS = 10 V, ID = 3.0 A) MAX. (VGS = 4.5 V, ID = 3.0 A) MAX. (VGS = 4.0 V, ID = 3 A) MAX. (VGS = -10 V, ID = -2.5 A)
