ME2345 Datasheet (Matsuki) - P-Channel Enhancement Mode Mosfet

ME2345, P-Channel Enhancement Mode Mosfet

The ME2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME2345 Features

* RDS(ON) ≦65mΩ@VGS=-10V

* RDS(ON) ≦75mΩ@VGS=-4.5V

* RDS(ON) ≦105mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

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