ME2345-G, ME2345 Datasheet - Matsuki

ME2345-G P-Channel Enhancement Mode Mosfet

The ME2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as.

ME2345-G Features

* RDS(ON) ≦65mΩ@VGS=-10V

* RDS(ON) ≦75mΩ@VGS=-4.5V

* RDS(ON) ≦105mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* B

ME2345-Matsuki.pdf

ME2345-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2345-G, ME2345. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2345-G, ME2345

Manufacturer:

Matsuki

File Size:

0.99 MB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2345-G, ME2345.
Please refer to the document for exact specifications by model.

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TAGS

ME2345-G ME2345 P-Channel Enhancement Mode Mosfet Matsuki

ME2345-G Distributor