Datasheet Details
Part number:
ME2345-G, ME2345
Manufacturer:
Matsuki
File Size:
0.99 MB
Description:
P-channel enhancement mode mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME2345-G, ME2345.
Please refer to the document for exact specifications by model.
ME2345-G, ME2345, P-Channel Enhancement Mode Mosfet
The ME2345 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as
ME2345-G Features
* RDS(ON) ≦65mΩ@VGS=-10V
* RDS(ON) ≦75mΩ@VGS=-4.5V
* RDS(ON) ≦105mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Portable Equipment
* B
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