ME2347 Datasheet (Matsuki) - P-Channel Enhancement Mode Mosfet

ME2347, P-Channel Enhancement Mode Mosfet

The ME2347 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME2347 Features

* RDS(ON)≦80mΩ@VGS=-10V

* RDS(ON)≦95mΩ@VGS=-4.5V

* RDS(ON)≦120mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Batt