ME2347-G, ME2347 Datasheet - Matsuki

ME2347-G P-Channel Enhancement Mode Mosfet

The ME2347 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as .

ME2347-G Features

* RDS(ON)≦80mΩ@VGS=-10V

* RDS(ON)≦95mΩ@VGS=-4.5V

* RDS(ON)≦120mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Portable Equipment

* Batt

ME2347-Matsuki.pdf

ME2347-G Datasheet Preview — This datasheet PDF includes multiple part numbers: ME2347-G, ME2347. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ME2347-G, ME2347

Manufacturer:

Matsuki

File Size:

1.19 MB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: ME2347-G, ME2347.
Please refer to the document for exact specifications by model.

ME2347-G Distributor

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ME2347-G ME2347 P-Channel Enhancement Mode Mosfet Matsuki