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MSAGA11F120D - Fast IGBT Die

The MSAGA11F120D by Microsemi Corporation is a Fast IGBT Die. Below is the official datasheet preview.

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Official preview page of the MSAGA11F120D Fast IGBT Die datasheet (Microsemi Corporation).

MSAGA11F120D Product details

Description

N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. Collector/Gate Metallization: Ti Ni (1 um) Ag (0.2 um) for soft solder attach Surge Current (ICM) - Amps 55 10µs x 4ms double exponential

Features

📁 MSAGA11F120D Similar Datasheet

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