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MSAGA11F120D Datasheet - Microsemi Corporation

MSAGA11F120D Fast IGBT Die

* * * N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. * Collector/Gate Metallization: Ti * Ni (1 um) * Ag (0.2 um) for.

MSAGA11F120D Features

* Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated

* Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix 35-50% of ICM Max 1

MSAGA11F120D Datasheet (184.60 KB)

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Datasheet Details

Part number:

MSAGA11F120D

Manufacturer:

Microsemi ↗ Corporation

File Size:

184.60 KB

Description:

Fast igbt die.

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MSAGA11F120D Fast IGBT Die Microsemi Corporation

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