Datasheet4U Logo Datasheet4U.com

MSAGA11F120D Datasheet - Microsemi Corporation

MSAGA11F120D Fast IGBT Die

* * * N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. * Collector/Gate Metallization: Ti * Ni (1 um) * Ag (0.2 um) for.

MSAGA11F120D Features

* Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated

* Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix 35-50% of ICM Max 1

MSAGA11F120D_MicrosemiCorporation.pdf

Preview of MSAGA11F120D PDF
MSAGA11F120D Datasheet Preview Page 2 MSAGA11F120D Datasheet Preview Page 3

Datasheet Details

Part number:

MSAGA11F120D

Manufacturer:

Microsemi ↗ Corporation

File Size:

184.60 KB

Description:

Fast igbt die.

📁 Related Datasheet

MSAGX60F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Microsemi Corporation)

MSAGX75F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Microsemi Corporation)

MSAGX75L60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Microsemi Corporation)

MSAGZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Microsemi Corporation)

MSA-0100 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0104 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0135 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

MSA-0136 Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

TAGS

MSAGA11F120D MSAGA11F120D Fast IGBT Die Microsemi Corporation

MSAGA11F120D Distributor