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MSAGX75F60A - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

The MSAGX75F60A by Microsemi Corporation is a N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR. Below is the official datasheet preview.

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Official preview page of the MSAGX75F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR datasheet (Microsemi Corporation).

Datasheet Details

Part number MSAGX75F60A
Manufacturer Microsemi Corporation
File Size 66.02 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet MSAGX75F60A_MicrosemiCorporation.pdf
Additional preview pages of the MSAGX75F60A datasheet.

MSAGX75F60A Product details

Description

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg θJC MAX.600 600 +/-20 +/-30 75 50 200 100 300 -55 to +150 -55 to +150 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C °C/W Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current, pulse width limited by

Features

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