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MSAGX75F60A Datasheet - Microsemi Corporation

MSAGX75F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg θJC MAX. 600 600 +/-20 +/-30 75 50 200 100 300 -55 to +150 -55 to +150 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C °C/W Collector-to-Gate Break.

MSAGX75F60A Features

* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSA

MSAGX75F60A_MicrosemiCorporation.pdf

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Datasheet Details

Part number:

MSAGX75F60A

Manufacturer:

Microsemi ↗ Corporation

File Size:

66.02 KB

Description:

N-channel insulated gate bipolar transistor.

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MSAGX75F60A MSAGX75F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Microsemi Corporation

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