MSAGX75F60A Datasheet (Microsemi Corporation) - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

MSAGX75F60A, N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg θJC MAX.

600 600 +/-20 +/-30 75 50 200 100 300 -55 to +150 -55 to +150 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C °C/W Collector-to-Gate Break

MSAGX75F60A Features

* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSA