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MSAGX75F60A

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

MSAGX75F60A Features

* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSA

MSAGX75F60A General Description

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg θJC MAX. 600 600 +/-20 +/-30 75 50 200 100 300 -55 to +150 -55 to +150 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C °C/W Collector-to-Gate Break.

MSAGX75F60A Datasheet (66.02 KB)

Preview of MSAGX75F60A PDF

Datasheet Details

Part number:

MSAGX75F60A

Manufacturer:

Microsemi ↗ Corporation

File Size:

66.02 KB

Description:

N-channel insulated gate bipolar transistor.
www.DataSheet4U.com 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX75F60A 600 Volts 75 Amps 2.7 Volts vce(sat).

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MSAGX75F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Microsemi Corporation

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