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MSAGX60F60A - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

The MSAGX60F60A by Microsemi Corporation is a N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR. Below is the official datasheet preview.

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Official preview page of the MSAGX60F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR datasheet (Microsemi Corporation).

Datasheet Details

Part number MSAGX60F60A
Manufacturer Microsemi Corporation
File Size 69.24 KB
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet MSAGX60F60A_MicrosemiCorporation.pdf
Additional preview pages of the MSAGX60F60A datasheet.

MSAGX60F60A Product details

Description

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJC MAX.600 600 +/-20 +/-30 60 32 120 64 300 -55 to +150 -55 to +150 32 100 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C Amps Amps °C/W Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current, p

Features

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