MSAGX60F60A Datasheet, Transistor, Microsemi Corporation

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Part number:

MSAGX60F60A

Manufacturer:

Microsemi ↗ Corporation

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📄 Datasheet

Description:

N-channel insulated gate bipolar transistor. Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj T

✔ MSAGX60F60A Features

Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inducta

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MSAGX60F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Microsemi Corporation