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MSAGX60F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

MSAGX60F60A Description

www.DataSheet4U.com 2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX60F60A MSAHX60F60A 600 Volts 60 Amps 2.9 Vo.
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJC M.

MSAGX60F60A Features

* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon re

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Microsemi Corporation
Microsemi Corporation MSAGX60F60A-like datasheet