Datasheet4U Logo Datasheet4U.com

MSAGX75L60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

MSAGX75L60A Description

www.DataSheet4U.com 2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX75L60A 600 Volts 75 Amps 1.8 Volts vce(sat).
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg θJC MAX.

MSAGX75L60A Features

* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSA

📥 Download Datasheet

Preview of MSAGX75L60A PDF
datasheet Preview Page 2

📁 Related Datasheet

  • MSA-0100 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0104 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0135 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0136 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0170 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0185 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0186 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)
  • MSA-0200 - Cascadable Silicon Bipolar MMIC Amplifier (Hewlett-Packard)

📌 All Tags

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Microsemi Corporation
Microsemi Corporation MSAGX75L60A-like datasheet