MSAGZ52F120A Datasheet, Transistor, Microsemi Corporation

MSAGZ52F120A Features

• Transistor
• Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed

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Part number:

MSAGZ52F120A

Manufacturer:

Microsemi ↗ Corporation

File Size:

69.99kb

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📄 Datasheet

Description:

N-channel insulated gate bipolar transistor. Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90)

TAGS

MSAGZ52F120A

Microsemi Corporation

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