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MSAGZ52F120A Datasheet - Microsemi Corporation

MSAGZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX. 1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 to +150 50 100 0.4 COLLECTOR UNIT Volts Volts Volt.

MSAGZ52F120A Features

* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon re

MSAGZ52F120A_MicrosemiCorporation.pdf

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Datasheet Details

Part number:

MSAGZ52F120A

Manufacturer:

Microsemi ↗ Corporation

File Size:

69.99 KB

Description:

N-channel insulated gate bipolar transistor.

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MSAGZ52F120A MSAGZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Microsemi Corporation

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