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MSAHX60F60A, MSAGX60F60A Datasheet - Microsemi Corporation

MSAHX60F60A, MSAGX60F60A, N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

www.DataSheet4U.com 2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX60F60A MSAHX60F60A 600 Volts 60 Amps 2.9 Vo.
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJC M.
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Features

* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon re

MSAGX60F60A_MicrosemiCorporation.pdf

This datasheet PDF includes multiple part numbers: MSAHX60F60A, MSAGX60F60A. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MSAHX60F60A, MSAGX60F60A

Manufacturer:

Microsemi ↗ Corporation

File Size:

69.24 KB

Description:

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Note:

This datasheet PDF includes multiple part numbers: MSAHX60F60A, MSAGX60F60A.
Please refer to the document for exact specifications by model.

MSAHX60F60A Distributors

📁 Related Datasheet

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MSAGX60F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Microsemi Corporation
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