The MSAHX60F60A by Microsemi Corporation is a N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR. Below is the official datasheet preview.
| Part number | MSAHX60F60A, MSAGX60F60A |
|---|---|
| Manufacturer | Microsemi Corporation |
| File Size | 69.24 KB |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet |
 MSAGX60F60A_MicrosemiCorporation.pdf
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| Note |
This datasheet PDF includes multiple part numbers: MSAHX60F60A, MSAGX60F60A. Please refer to the document for exact specifications by model. |
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Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg IS ISM θJC MAX.600 600 +/-20 +/-30 60 32 120 64 300 -55 to +150 -55 to +150 32 100 0.4 UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C Amps Amps °C/W Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current, p
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