MSAGZ52F120A_MicrosemiCorporation.pdf
Datasheet Details
Part number:
MSAHZ52F120A, MSAGZ52F120A
Manufacturer:
Microsemi ↗ Corporation
File Size:
69.99 KB
Description:
N-channel insulated gate bipolar transistor.
Note:
This datasheet PDF includes multiple part numbers: MSAHZ52F120A, MSAGZ52F120A.
Please refer to the document for exact specifications by model.
MSAHZ52F120A, MSAGZ52F120A, N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc)RBSOA PD Tj Tstg IS ISM θJC MAX.
1200 1200 +/-20 +/-30 52 33 104 66 65 260 66 300 -55 to +150 -55 to +150 50 100 0.4 COLLECTOR UNIT Volts Volts Volt
MSAHZ52F120A Features
* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon re
📁 Related Datasheet
📌 All Tags
