MSAHZ52F120A, MSAGZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

Microsemi Corporation

Description

www.DataSheet4U.com 2830 S.Fairview St.Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGZ52F120A MSAHZ52F120A 1200 Volts 52 Amps 3.2.
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM(25) ICM(90) EAS IC(sc) IC(sc).

📥 Download Datasheet

MSAHZ52F120A Datasheet Preview — This datasheet PDF includes multiple part numbers: MSAHZ52F120A, MSAGZ52F120A. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: MSAHZ52F120A, MSAGZ52F120A
Manufacturer: Microsemi ↗ Corporation
File Size: 69.99 KB
Datasheet: MSAGZ52F120A_MicrosemiCorporation.pdf
Description: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: MSAHZ52F120A, MSAGZ52F120A.
Please refer to the document for exact specifications by model.

Features

* Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon re

MSAHZ52F120A Distributors

📁 Related Datasheet

MSA-0100 MSA-0104 MSA-0135 MSA-0136 MSA-0170 MSA-0185

📌 All Tags

MSAGZ52F120A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Microsemi Corporation

Microsemi Corporation MSAHZ52F120A-like datasheet