BLS6G2731-6G Datasheet - NXP Semiconductors

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BLS6G2731-6G LDMOS S-Band radar power transistor

BLS6G2731-6G LDMOS S-Band radar power transistor Rev.01 * 19 February 2009 www.DataSheet4U.com Product data sheet 1.Product proﬁle 1.1 Ge.
6 W LDMOS power transistor intended for radar applications in the 2.

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Datasheet Details

Part number:

BLS6G2731-6G

Manufacturer:

NXP ↗ Semiconductors

File Size:

98.83 KB

Description:

LDMOS S-Band radar power transistor

Features

* I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %: N Output power = 6 W N Power gain = 15 dB N Efﬁciency = 33 % I Integrated ESD protection I High ﬂexibility with respect to pulse formats I Excellent rugged

Applications

* in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 25 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 6 Gp (dB) 15 ηD (%) 33 tr (ns) 20 tf (ns) 10 CAUTION Thi

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BLS6G2731-6G LDMOS S-Band radar power transistor NXP Semiconductors

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