* I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %: N Output power = 6 W N Power gain = 15 dB N Efficiency = 33 % I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent rugged
BLS6G2731-6G Datasheet (98.83 KB)
BLS6G2731-6G
NXP ↗ Semiconductors
98.83 KB
Ldmos s-band radar power transistor.
BLS6G2731-6G
LDMOS S-Band radar power transistor
Rev. 01
* 19 February 2009
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