BLS6G2731-6G - LDMOS S-Band radar power transistor

Product Overview

NXP Semiconductors

Part number	BLS6G2731-6G
Manufacturer	NXP Semiconductors
File Size	98.83 KB
Description	LDMOS S-Band radar power transistor
Datasheet	BLS6G2731-6G Datasheet
Additional preview pages of the BLS6G2731-6G datasheet.

6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 µs and a δ of 10 %: N Output power = 6 W N Power gain = 15 dB N Efﬁciency = 33 % I Integrated ESD protection I High ﬂexibility with respect to pulse formats I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2.7 GHz to 3.1 GHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restrict.

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Published: Jun 18, 2010 |