Part number:
BLS6G2731S-120
Manufacturer:
File Size:
112.86 KB
Description:
Ldmos s-band radar power transistor.
BLS6G2731S-120 Features
* I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Output power = 120 W N Power gain = 13.5 dB N Efficiency = 48 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse f
BLS6G2731S-120 Datasheet (112.86 KB)
Datasheet Details
BLS6G2731S-120
112.86 KB
Ldmos s-band radar power transistor.
📁 Related Datasheet
BLS6G2731S-120 LDMOS S-band radar power transistor (Ampleon)
BLS6G2731S-130 LDMOS S-band radar power transistor (NXP)
BLS6G2731-120 LDMOS S-band radar power transistor (Ampleon)
BLS6G2731-120 LDMOS S-band Radar Power Transistor (NXP)
BLS6G2731-6G LDMOS S-Band radar power transistor (Ampleon)
BLS6G2731-6G LDMOS S-Band radar power transistor (NXP Semiconductors)
BLS6G2735L-30 S-band LDMOS transistor (Ampleon)
BLS6G2735L-30 S-band LDMOS transistor (NXP)
BLS6G2735LS-30 S-band LDMOS transistor (Ampleon)
BLS6G2735LS-30 S-band LDMOS transistor (NXP)
BLS6G2731S-120 Distributor