BLS6G2731S-120, BLS6G2731-120 - LDMOS S-band Radar Power Transistor

NXP

Datasheet Details

Part number	BLS6G2731S-120, BLS6G2731-120
Manufacturer	NXP ↗
File Size	112.86 KB
Description	LDMOS S-band Radar Power Transistor
Datasheet	BLS6G2731-120_PhilipsSemiconductors.pdf
Note	This datasheet PDF includes multiple part numbers: BLS6G2731S-120, BLS6G2731-120. Please refer to the document for exact specifications by model.

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Output power = 120 W N Power gain = 13.5 dB N Efﬁciency = 48 % I Easy power control I Integrated ESD protection I High ﬂexibility with respect to pulse formats I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2.7 GHz to 3.1 GHz) I Internally matched for ease of use I Compliant to Directive 2002/.

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Published: Jul 29, 2009 |