BLF6G20-180PN - Power LDMOS transistor

NXP Semiconductors

BLF6G20-180PN Datasheet Preview — Preview of BLF6G20-180PN PDF

Datasheet Details

Part number	BLF6G20-180PN
Manufacturer	NXP ↗ Semiconductors
File Size	122.03 KB
Description	Power LDMOS transistor
Datasheet	BLF6G20-180PN_NXPSemiconductors.pdf

BLF6G20-180PN Product details

Description

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. 35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CA

Features

I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 32 V and an IDq of 1600 mA: N Average output power = 50 W N Power gain = 18 dB (typ) N Efﬁciency = 29.5 % N ACPR =.
35 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use I Qualiﬁed up to a supply voltage of 32 V I Compliant t.

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Published: Jul 1, 2009 |