Datasheet Details
- Part number
- PBSS5160T
- Manufacturer
- NXP ↗ Semiconductors
- File Size
- 662.50 KB
- Datasheet
- PBSS5160T_NXPSemiconductors.pdf
- Description
- PNP Transistor
PBSS5160T Description
PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Rev.04 * 15 January 2010 Product data sheet 1.Product profile 1.1 General descriptio.
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
PBSS5160T Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency due to less heat generation
* Reduces Printed-Circuit Board (PCB) area required
* Cost-effective replacement for medium power transistors BCP52 a
PBSS5160T Applications
* Major application segments: Automotive Telecom infrastructure Industrial
* Power management: DC-to-DC conversion Supply line switching
* Peripheral driver: Driver in low supply voltage applications (e. g. lamps and LEDs) Inductive load drivers (e. g. relays, buz
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