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FDMC86570L N-Channel MOSFET

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Description

MOSFET * N-Channel, Shielded Gate POWERTRENCH) 60 V, 84 A, 4.3 mW FDMC86570L General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 4.3 mW at VGS = 10 V, ID = 18 A
* Max rDS(on) = 6.5 mW at VGS = 4.5 V, ID = 15 A
* High Performance Technology for Extremely Low rDS(on)
* These Devices are Pb

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FDMC86570L-like datasheet