FDMS8D8N15C

N-Channel MOSFET

ON Semiconductor

* Shielded Gate MOSFET Technology

* Max rDS(on) = 8.8 mW at VGS = 10 V, ID = 45 A

* Max rDS(on) = 9.4 mW at VGS = 8 V, ID = 22.5 A

* Low Qrr, Soft Recovery Body Diode

* Lowers Switching Noise/EMI

* MSL1 Robust Package Design

* 100% UIL Tested

FDMS8D8N15C

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N-channel mosfet.

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FDMS8D8N15C N-Channel MOSFET ON Semiconductor

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