FDMS8D8N15C N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N‐Channel Shielded Gate POWERTRENCH) 150 V, 85 A, 8.8 mW FDMS8D8N15C General .
This N-Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMS8D8N15C
Manufacturer: ON Semiconductor ↗
File Size: 334.36 KB
Datasheet: FDMS8D8N15C-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 8.8 mW at VGS = 10 V, ID = 45 A
* Max rDS(on) = 9.4 mW at VGS = 8 V, ID = 22.5 A
* Low Qrr, Soft Recovery Body Diode
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL Tested

Applications

* Primary DC
* DC MOSFET
* Synchronous Rectifier in DC
* DC and AC
* DC
* Motor Drive
* Solar MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain
* to
* Source Voltage 150 V VGS Gate

FDMS8D8N15C Distributors

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FDMS8D8N15C N-Channel MOSFET ON Semiconductor

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