FDMS8D8N15C Datasheet - ON Semiconductor

FDMS8D8N15C, N-Channel MOSFET

MOSFET * N‐Channel Shielded Gate POWERTRENCH) 150 V, 85 A, 8.8 mW FDMS8D8N15C General .
This N-Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Details

Part number:

FDMS8D8N15C

Manufacturer:

ON Semiconductor ↗

File Size:

334.36 KB

Description:

N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max rDS(on) = 8.8 mW at VGS = 10 V, ID = 45 A
* Max rDS(on) = 9.4 mW at VGS = 8 V, ID = 22.5 A
* Low Qrr, Soft Recovery Body Diode
* Lowers Switching Noise/EMI
* MSL1 Robust Package Design
* 100% UIL Tested

Applications

* Primary DC
* DC MOSFET
* Synchronous Rectifier in DC
* DC and AC
* DC
* Motor Drive
* Solar MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain
* to
* Source Voltage 150 V VGS Gate

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