FDMS8D8N15C - N-Channel MOSFET

ON Semiconductor

FDMS8D8N15C Datasheet Preview — Preview of FDMS8D8N15C PDF

Datasheet Details

Part number	FDMS8D8N15C
Manufacturer	ON Semiconductor ↗
File Size	334.36 KB
Description	N-Channel MOSFET
Datasheet	FDMS8D8N15C-ONSemiconductor.pdf

FDMS8D8N15C Product details

Description

This N-Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized to minimize on state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 8.8 mW at VGS = 10 V, ID = 45 A.
Max rDS(on) = 9.4 mW at VGS = 8 V, ID = 22.5 A.
Low Qrr, Soft Recovery Body Diode.
Lowers Switching Noise/EMI.
MSL1 Robust Package Design.
100% UIL Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Apr 4, 2025 |