FQB8N60C

N-Channel MOSFET

ON Semiconductor

FQB8N60C Features

* 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A

* Low Gate Charge (Typ. 28 nC)

* Low Crss (Typ. 12 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D2-PAK GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. S

FQB8N60C General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQB8N60C Datasheet (754.28 KB)