HGTG30N60B3D N-Channel IGBT

ON Semiconductor

Description

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 60 A, 600 V HGTG30N60B3D The HGTG30N60B3D is a MOS gated high voltage switching device co.

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Datasheet Specifications

Part number: HGTG30N60B3D
Manufacturer: ON Semiconductor ↗
File Size: 424.40 KB
Datasheet: HGTG30N60B3D-ONSemiconductor.pdf
Description: N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. Th

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HGTG30N60B3D N-Channel IGBT ON Semiconductor

ON Semiconductor HGTG30N60B3D-like datasheet