Part number:
HGTG30N60B3D
Manufacturer:
File Size:
424.40 KB
Description:
N-channel igbt.
HGTG30N60B3D-ONSemiconductor.pdf
Datasheet Details
Part number:
HGTG30N60B3D
Manufacturer:
File Size:
424.40 KB
Description:
N-channel igbt.
HGTG30N60B3D, N-Channel IGBT
HGTG30N60B3D Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. Th
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