HGTG30N60B3D Datasheet - ON Semiconductor

HGTG30N60B3D N-Channel IGBT

HGTG30N60B3D Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The much lower on

* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. Th

Datasheet Details

HGTG30N60B3D

424.40 KB

N-channel igbt.

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