FDC6301N - Dual N-Channel Digital FET

ON Semiconductor

FDC6301N Datasheet Preview — Preview of FDC6301N PDF

Datasheet Details

Part number	FDC6301N
Manufacturer	ON Semiconductor ↗
File Size	315.50 KB
Description	Dual N-Channel Digital FET
Datasheet	FDC6301N-ONSemiconductor.pdf

FDC6301N Product details

Description

These dual N Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance. Channel FET’s can replace several digital transistors, with a variety of bias

Features

25 V, 0.22 A Continuous, 0.5 A Peak.
RDS(on) = 5 W @ VGS = 2.7 V.
RDS(on) = 4 W @ VGS = 4.5 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
Gate.
Source Zener for ESD Ruggedness. >6 kV Human Body Model.
This is a Pb.
Free and Halide Free Device DATA SHEET www. onsemi. com D2 S1 D1 G2 G1S2 TSOT23 6.
Lead SUPERSOTt.
6 CASE 419BL.

📁 FDC6301N Similar Datasheet

FDC6302P - Digital FET/ Dual P-Channel (Fairchild Semiconductor)
FDC6303N - Dual N-Channel Digital FET (Fairchild Semiconductor)
FDC6304P - Digital FET/ Dual P-Channel (Fairchild Semiconductor)
FDC6305N - Dual N-Channel MOSFET (Fairchild Semiconductor)
FDC6306P - Dual P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDC6308P - Dual P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDC6310P - Dual P-Channel 2.5V Specified PowerTrench MOSFET (Fairchild Semiconductor)
FDC6312P - Dual P-Channel MOSFET (Fairchild Semiconductor)

Other Datasheets by ON Semiconductor

FDC6320C - Dual N & P Channel Digital FET
FDC6321C - Dual N & P-Channel Digital FET
FDC6323L - Integrated Load Switch
FDC6324L - Integrated Load Switch
FDC6325L - Integrated Load Switch
FDC6326L - Integrated Load Switch

Published: Dec 12, 2021 |