Datasheet Details
- Part number
- FDMS3572
- Manufacturer
- ON Semiconductor ↗
- File Size
- 292.45 KB
- Datasheet
- FDMS3572-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDMS3572 Description
MOSFET * N-Channel, UltraFET Trench 80 V, 22 A, 16.5 mW FDMS3572 General .
UItraFET devices combine characteristics that enable benchmark
efficiency in power conversion applications.
FDMS3572 Features
* Max RDS(on) = 16.5 mW at VGS = 10 V, ID = 8.8 A
* Max RDS(on) = 24 mW at VGS = 6 V, ID = 8.4 A
* Typ Qg = 28 nC at VGS = 10 V
* Low Miller Charge
* Optimized Efficiency at High Frequencies
* Pb
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