FDMS86101DC - N-Channel MOSFET

ON Semiconductor

FDMS86101DC Datasheet Preview — Preview of FDMS86101DC PDF

Datasheet Details

Part number	FDMS86101DC
Manufacturer	ON Semiconductor ↗
File Size	458.66 KB
Description	N-Channel MOSFET
Datasheet	FDMS86101DC-ONSemiconductor.pdf

FDMS86101DC Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology.Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction to Ambient thermal resistance.

Features

Shielded Gate MOSFET Technology.
DUAL COOL Top Side Cooling PQFN package.
Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A.
Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A.
High performance technology for extremely low RDS(on).
100% UIL Tested.
RoHS Compliant Typical.

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Published: Feb 5, 2023 |