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FFSH1665A Silicon Carbide Schottky Diode

FFSH1665A Description

Silicon Carbide Schottky Diode 650 V, 16 A FFSH1665A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

FFSH1665A Features

* Max Junction Temperature 175°C
* Avalanche Rated 81 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* This Device is Pb
* Free and is RoHS Compliant A

FFSH1665A Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits www. onsemi. com VRRM 650 V IF 16 A 1. Cathode 2. Anode 1 2 TO
* 247
* 2LD CASE 340CL MARKING DIAGRAM $Y&Z&3&K FFSH 1665A © Semiconductor Components Industries, LLC, 2017 February, 2020

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Silicon Carbide Schottky Diode ON Semiconductor
ON Semiconductor FFSH1665A-like datasheet