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FQD12N20L N-Channel MOSFET

FQD12N20L Description

MOSFET * N-Channel, QFET 200 V, 9.0 A, 280 mW FQD12N20L .
This N. Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.

FQD12N20L Features

* 9.0 A, 200 V, RDS(on) = 280 mW (Max. ) @ VGS = 10 V, ID = 4.5 A
* Low Gate Charge (Typ. 16 nC)
* Low Crss (Typ. 17 pF)
* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Rating Unit VDSS ID IDM VGSS EAS IAR EAR

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FQD12N20L-like datasheet