FQP13N50C - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number: FQP13N50C
Manufacturer: ON Semiconductor ↗
File Size: 1.02 MB
Datasheet: FQP13N50C-ONSemiconductor.pdf
Description: N-Channel MOSFET

FQP13N50C Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based o.

Features

13 A, 500 V, RDS(on) = 480 mΩ (Max. ) @ VGS = 10 V, ID = 6.5 A.
Low Gate Charge (Typ. 43 nC).
Low Crss (Typ. 20 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25.

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N-Channel MOSFET ON Semiconductor

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