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HGTG30N60B3 - IGBT

HGTG30N60B3 Description

IGBT - NPT 600 V HGTG30N60B3 .
The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on. state conduction loss of a bipolar transistor.

HGTG30N60B3 Features

* of high input impedance of a MOSFET and the low on

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