Datasheet Details
- Part number
- NTHL020N090SC1
- Manufacturer
- ON Semiconductor ↗
- File Size
- 332.86 KB
- Datasheet
- NTHL020N090SC1-ONSemiconductor.pdf
- Description
- 900V SiC MOSFET
NTHL020N090SC1 Description
DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 20 mohm, 900 V, M2, TO-247-3L V(BR)DSS 900 V RDS(ON) MAX 28 mW @ 15 V I.
NTHL020N090SC1 Features
* Typ. RDS(on) = 20 mW @ VGS = 15 V
* Typ. RDS(on) = 16 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 196 nC)
* Low Effective Output Capacitance (Coss = 296 pF)
* 100% UIL Tested
* This Device is Halide Free and RoHS Compliant with exemption 7a,
P
NTHL020N090SC1 Applications
* UPS
* DC
* DC Converter
* Boost Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain
* to
* Source Voltage
Gate
* to
* Source Voltage
Recommended Operation Values of Gate
* Source Voltage
VD
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