PDC2602X - N-Channel MOSFETs
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDC2602X Features
* 20V,210A, RDS(ON) =1.4mΩ@VGS = 4.5V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB / VGA / Vcore
* POL Applications
* SMPS 2nd SR
* Networking
* Load Switch Absolute Maximum Ratings Tc=25℃ unles
