PDC2603Z Datasheet - Potens semiconductor

PDC2603Z P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDC2603Z Features

* -20V,-60A, RDS(ON) =8mΩ@VGS = -4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Networking

* Hand-Held Instruments Absolute Maximum Ratings Tc=25℃ unless

PDC2603Z-Potenssemiconductor.pdf

PDC2603Z Datasheet Preview — Preview of PDC2603Z PDF

Datasheet Details

Part number:

PDC2603Z

Manufacturer:

Potens semiconductor

File Size:

0.95 MB

Description:

P-channel mosfet.

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PDC2603Z PDC2603Z P-Channel MOSFET Potens semiconductor

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