PDC2603Z - P-Channel MOSFET
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDC2603Z Features
* -20V,-60A, RDS(ON) =8mΩ@VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications Applications
* Notebook
* Load Switch
* Networking
* Hand-Held Instruments Absolute Maximum Ratings Tc=25℃ unless
