PDC2601X - P-Channel MOSFETs
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDC2601X Features
* -20V,-90A, RDS(ON) =2.3mΩ@VGS = -10V
* Improved dv/dt capability
* Fast switching
* Green Device Available Applications
* Notebook
* Load Switch
* Networking
* Hand-Held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD T
