PDC2209V - P-Channel MOSFET
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDC2209V Features
* -20V,-7.5A, RDS(ON) =33mΩ @VGS = -4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available PPAK3x3 Dual Pin Configuration D1 D1D1D2D2 S1G1S2G2 G1 G2 S1 Applications D2
* MB / VGA / Vcore
* POL Applications
* Networking S2 Absolute Maximum Ratings
