Description
250 um GaAs pHEMT
1 of 2
www.qorvo.com
QPD2025D
®
250 um Discrete GaAs pHEMT
Absolute Maximum Ratings1
Parameter
Absolute
Continuous
Units
Drain-Source Voltage (VDS)(2)
12
8
V
Gate-Source Voltage (VGS)
-7
-3
V
Drain Current (IDS)(2)
IDSS
IDSS
mA
Forward Gate Current (IG,F)
12
2
W
Channel Temperature (TCH)(3)
175(4)
150(5)
°C
Storage Temperature (TSTG)
-65 to 150
-65 to 150
°C
RF Input Power (PIN)(2)
18
At 3dB Compression
dBm
Power Dissipation (PTOT)
1.34
Features
- advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. QPD2025D
250 um Discrete GaAs pHEMT
The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes the QPD2025D appropriate for high efficiency.
QPD2025D-Qorvo.pdf
