QPD2025D - Discrete GaAs pHEMT
250 um GaAs pHEMT 1 of 2 www.qorvo.com QPD2025D ® 250 um Discrete GaAs pHEMT Absolute Maximum Ratings1 Parameter Absolute Continuous Units Drain-Source Voltage (VDS)(2) 12 8 V Gate-Source Voltage (VGS) -7 -3 V Drain Current (IDS)(2) IDSS IDSS mA Forward Gate Current (IG,F) 12
QPD2025D Features
* advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. QPD2025D 250 um Discrete GaAs pHEMT The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes t
