Datasheet4U Logo Datasheet4U.com

QPD2025D

Discrete GaAs pHEMT

QPD2025D Features

* advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. QPD2025D 250 um Discrete GaAs pHEMT The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes t

QPD2025D General Description

250 um GaAs pHEMT 1 of 2 www.qorvo.com QPD2025D ® 250 um Discrete GaAs pHEMT Absolute Maximum Ratings1 Parameter Absolute Continuous Units Drain-Source Voltage (VDS)(2) 12 8 V Gate-Source Voltage (VGS) -7 -3 V Drain Current (IDS)(2) IDSS IDSS mA Forward Gate Current (IG,F) 12.

QPD2025D Datasheet (0.97 MB)

Preview of QPD2025D PDF

Datasheet Details

Part number:

QPD2025D

Manufacturer:

Qorvo

File Size:

0.97 MB

Description:

Discrete gaas phemt.
® Product Overview The Qorvo QPD2025D is a discrete 250 micron pHEMT which operates from DC to 20 GHz. The QPD2025D is fabricated using Qorvo’s proven.

📁 Related Datasheet

QPD0005M - GaN RF Transistor (Qorvo)
QPD0005M ® 8 W, 48 V, 2.5 – 5.0 GHz, GaN RF Transistor Product Overview The QPD0005M is a single-path discrete GaN on SiC HEMT in a plastic overmol.

QPD0012 - Asymmetric Doherty (Qorvo)
QPD0012 ® 20 W / 40 W, 48 V, 2.5 – 2.7 GHz, Asymmetric Doherty Transistor Product Overview The QPD0012 is a dual-path discrete GaN on SiC HEMT in DFN.

QPD0030 - RF Power Transistor (TriQuint Semiconductor)
Applications • W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Appli.

QPD0030 - GaN RF Power Transistor (qorvo)
QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Product Overview The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which o.

QPD0050 - RF Power Transistor (TriQuint Semiconductor)
Applications • W-CDMA / LTE • Macrocell Base Station Driver • Microcell Base Station • Small Cell Final Stage • Active Antenna • General Purpose Appli.

QPD0305 - Dual GaN RF Transistor (Qorvo)
QPD0305 ® 2x20 W, 48 V, 3.4 – 3.8 GHz, Dual GaN RF Transistor Product Overview The QPD0305 is a dual-path GaN power amplifier in a DFN package which .

QPD1003 - GaN RF IMFET (Qorvo)
QPD1003 500W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.

QPD1006 - RF IMFET (Qorvo)
QPD1006 450W, 50V, 1.2 – 1.4 GHz, GaN RF IMFET Product Overview The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which opera.

TAGS

QPD2025D Discrete GaAs pHEMT Qorvo

Image Gallery

QPD2025D Datasheet Preview Page 2 QPD2025D Datasheet Preview Page 3

QPD2025D Distributor