H5N2508DL Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

Description

H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005 .

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Datasheet Specifications

Part number: H5N2508DL
Manufacturer: Renesas ↗ Technology
File Size: 126.34 KB
Datasheet: H5N2508DL_RenesasTechnology.pdf
Description: Silicon N Channel MOS FET High Speed Power Switching

Features

* www. DataSheet4U. com
* Low
* Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)
* High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)
* Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID

H5N2508DL Distributors

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H5N2508DL Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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