Datasheet Details
Part number:
H5N2508DL
Manufacturer:
Renesas ↗ Technology
File Size:
126.34 KB
Description:
Silicon n channel mos fet high speed power switching.
H5N2508DL_RenesasTechnology.pdf
H5N2508DL_RenesasTechnology.pdf
Datasheet Details
Part number:
H5N2508DL
Manufacturer:
Renesas ↗ Technology
File Size:
126.34 KB
Description:
Silicon n channel mos fet high speed power switching.
H5N2508DL, Silicon N Channel MOS FET High Speed Power Switching
H5N2508DL Features
* www.DataSheet4U.com
* Low
* Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)
* High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)
* Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID
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