H5N2508DS

Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

* www.DataSheet4U.com

* Low

* Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)

* High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)

* Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID

H5N2508DS

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Silicon n channel mos fet high speed power switching.

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