H5N2508DS Datasheet, Switching, Renesas Technology

H5N2508DS Features

  • Switching www.DataSheet4U.com
  • Low
  • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V)
  • High speed switching: tf = 11 ns typ

PDF File Details

Part number:

H5N2508DS

Manufacturer:

Renesas ↗ Technology

File Size:

126.34kb

Download:

📄 Datasheet

Description:

Silicon n channel mos fet high speed power switching.

Datasheet Preview: H5N2508DS 📥 Download PDF (126.34kb)
Page 2 of H5N2508DS Page 3 of H5N2508DS

TAGS

H5N2508DS
Silicon
Channel
MOS
FET
High
Speed
Power
Switching
Renesas Technology

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Stock and price

part
Renesas Electronics Corporation
NCH POWER MOSFET 250V 7A 630MOHM
DigiKey
H5N2508DSTL-E
0 In Stock
Qty : 9000 units
Unit Price : $1.02
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