* Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )
* Low input capacitance : Ciss = 15000 pF Typ.
* Built-in gate protection diode
* Designed for automotive application and AEC-Q101 qualified.
* P
NP100P06PLG Datasheet (1.32 MB)
NP100P06PLG
1.32 MB
P-channel power mosfet.
NP100P06PLG
-60V
* -100A
* P-channel Power MOS FET Application : Automotive
Datasheet
R07DS1522EJ0100 Rev.1.00
Jun. 24, 2022
Descrip.
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