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H7N1002LS, H7N1002LD - Silicon N Channel MOS FET High Speed Power Switching

H7N1002LS Description

H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006 .

H7N1002LS Features

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* Low on-resistance DS (on) = 8 mΩ typ.
* Low drive current
* Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name

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This datasheet PDF includes multiple part numbers: H7N1002LS, H7N1002LD. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H7N1002LS, H7N1002LD
Manufacturer
Renesas ↗ Technology
File Size
146.11 KB
Datasheet
H7N1002LD_RenesasTechnology.pdf
Description
Silicon N Channel MOS FET High Speed Power Switching
Note
This datasheet PDF includes multiple part numbers: H7N1002LS, H7N1002LD.
Please refer to the document for exact specifications by model.

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Silicon Channel MOS FET High Speed Power Switching Renesas Technology
Renesas Technology H7N1002LS-like datasheet

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