STG719

LOW VOLTAGE 4ohm SPDT SWITCH

ST Microelectronics

STG719 Features

* High speed:

* tPD = 0.3 ns (typ.) at VCC = 5 V

* tPD = 0.4 ns (typ.) at VCC = 3.3 V

* Low power dissipation:

* ICC = 1 μA (max.) at TA = 25 °C

* Low on resistance:

* RON = 4 Ω (max. TA = 25 °C) at VCC = 5 V

* RON = 6 Ω (typ.) at VCC =

STG719 General Description

The STG719 is a high-speed S.P.D.T. (single pole double throw) switch developed thanks to silicon gate C²MOS technology. It is designed to operate from 1.8 V to 5.5 V, making this device ideal for portable applications, audio signal routing, video switching, mobile and communication systems. It offe.

STG719 Datasheet (279.79 KB)