STSJ100NH3LL

N-CHANNEL POWER MOSFET

ST Microelectronics

STSJ100NH3LL Features

* TYPE STSJ100NH3LL

* Figure 1: Package RDS(on) < 0.0035Ω ID 25A VDSS 30V TYPICAL RDS(on) = 0.0032Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE IMPROVED JUNCTION-CASE THERMAL RESISTANCE PowerSO-8™ DESCRIPTION The STSJ100NH3L

STSJ100NH3LL General Description

The STSJ100NH3LL utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability. Fig.

STSJ100NH3LL Datasheet (470.13 KB)