Datasheet Specifications
- Part number
- STSJ2NM60
- Manufacturer
- STMicroelectronics ↗
- File Size
- 178.55 KB
- Datasheet
- STSJ2NM60_STMicroelectronics.pdf
- Description
- N-CHANNEL POWER MOSFET
Description
www.DataSheet4U.com N-CHANNEL 600V - 2.8Ω - 2A PowerSO-8 Zener-Protected MDmesh™ POWER MOSFET TYPE STSJ2NM60 s s s s STSJ2NM60 VDSS 600 V RDS(on) .Features
* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltaApplications
* The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage DrainSTSJ2NM60 Distributors
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