STSJ80N4LLF3

N-channel Power MOSFET

STMicroelectronics

STSJ80N4LLF3 Features

* Type STSJ80N4LLF3 VDSS 40V RDS(on) 0.005Ω ID 18A(1) 1. This value is rated according to Rthj-pcb

* Optimal RDS(on) x Qg trade-off @ 4.5V Switching losses reduced Low threshold device Improved junction-case thermal resistance PowerSO-8 Description This series of product utili

STSJ80N4LLF3 General Description

This series of product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capa.

STSJ80N4LLF3 Datasheet (323.44 KB)