STF16N50U Datasheet - STMicroelectronics

STF16N50U N-channel Power MOSFET

The device is an N-channel Ultrafast MESHTM. This technology associates all advantages of reduced on-resistance. Zener gate protection and very high dv/dt capability with an extremely enhanced fast body-drain recovery diode. 3 2 1 TO-220FP Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01.

STF16N50U Features

* Type STF16N50U VDSS @ Tjmax. 550 V RDS(on) max. ID Pw < 0.52 Ω 15 A 30 W

* 100% avalanche tested

* Outstanding dv/dt capability

* Gate charge minimized

* Very low intrinsic capacitance

* Very low RDS(on)

* Extremely low trr Application

* Switching applications

STF16N50U-STMicroelectronics.pdf