STGAP2SiCD Galvanically isolated 4A dual gate driver

STMicroelectronics

Description

STGAP2SiCD Datasheet Galvanically isolated 4 A dual gate driver Product status link STGAP2SiCD Product label .
The STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control a.

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Datasheet Specifications

Part number: STGAP2SiCD
Manufacturer: STMicroelectronics ↗
File Size: 690.44 KB
Datasheet: STGAP2SiCD-STMicroelectronics.pdf
Description: Galvanically isolated 4A dual gate driver

Features

* High voltage rail up to 1200 V
* Driver current capability: 4 A sink/source @ 25 °C
* dV/dt transient immunity ±100 V/ns
* Overall input-output propagation delay: 75 ns
* Separate sink and source option for easy gate driving configuration
* 4 A Mille

Applications

* such as power conversion and industrial motor drivers inverters. The separated output pins allow to independently optimize turn-on and turn-off by using dedicated gate resistors, while the Miller CLAMP function allows avoiding gate spikes during fast commutations in half-bridge topologies. The devic

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STGAP2SiCD Galvanically isolated dual gate driver STMicroelectronics

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