STGAP2SiCD Datasheet (STMicroelectronics) - Galvanically isolated 4A dual gate driver

STGAP2SiCD, Galvanically isolated 4A dual gate driver

The STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry.

The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making it suitable for mid and high power

STGAP2SiCD Features

* High voltage rail up to 1200 V

* Driver current capability: 4 A sink/source @ 25 °C

* dV/dt transient immunity ±100 V/ns

* Overall input-output propagation delay: 75 ns

* Separate sink and source option for easy gate driving configuration

* 4 A Mille