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STGAP2SiCD

Galvanically isolated 4A dual gate driver

STGAP2SiCD Features

* High voltage rail up to 1200 V

* Driver current capability: 4 A sink/source @ 25 °C

* dV/dt transient immunity ±100 V/ns

* Overall input-output propagation delay: 75 ns

* Separate sink and source option for easy gate driving configuration

* 4 A Mille

STGAP2SiCD General Description

The STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 4 A current capability and rail-to-rail outputs, making it suitable for mid and high power.

STGAP2SiCD Datasheet (690.44 KB)

Preview of STGAP2SiCD PDF

Datasheet Details

Part number:

STGAP2SiCD

Manufacturer:

STMicroelectronics ↗

File Size:

690.44 KB

Description:

galvanically isolated 4a dual gate driver.

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STGAP2SiCD Galvanically isolated dual gate driver STMicroelectronics

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