STGAP2SiCD - Galvanically isolated 4A dual gate driver

STMicroelectronics

STGAP2SiCD Datasheet Preview — Preview of STGAP2SiCD PDF

Datasheet Details

Part number	STGAP2SiCD
Manufacturer	STMicroelectronics ↗
File Size	690.44 KB
Description	Galvanically isolated 4A dual gate driver
Datasheet	STGAP2SiCD-STMicroelectronics.pdf

STGAP2SiCD Product details

Description

The STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry.

Features

High voltage rail up to 1200 V.
Driver current capability: 4 A sink/source @ 25 °C.
dV/dt transient immunity ±100 V/ns.
Overall input-output propagation delay: 75 ns.
Separate sink and source option for easy gate driving configuration.
4 A Miller CLAMP.
UVLO function.
Configurable interlocking function.
Dedicated SD and BRAKE pins.
Gate driving voltage up to 26 V.
3.3 V, 5 V TTL/CMOS inputs with h.

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Published: Feb 18, 2023 |