STGFW20V60DF Datasheet - STMicroelectronics

STGFW20V60DF Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the posi.

STGFW20V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Very high speed switching series

* Tail-less switching off

* VCE(sat) = 1.8 V (typ.) @ IC = 20 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode

STGFW20V60DF-STMicroelectronics.pdf