STGFW30V60DF

IGBT

STMicroelectronics

STGFW30V60DF Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.85 V (typ.) @ IC = 30 A

* Tight parameter distribution

* Safe paralleling

* Low thermal resistance

* Very fast soft recovery antiparallel diode Applications

STGFW30V60DF General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the posit.

STGFW30V60DF Datasheet (401.36 KB)