STGFW30H65FB Datasheet - STMicroelectronics

STGFW30H65FB IGBT

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the .

STGFW30H65FB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 1.55 V (typ.) at IC = 30 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance Applications

* Photov

STGFW30H65FB Datasheet (432.91 KB)