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STGFW30H65FB IGBT

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Description

STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT 3 2 1 TO-247 1 TO-3PF 3 2 1 G(1) C(2, TAB) E(3.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

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Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V (typ. ) at IC = 30 A
* Tight parameters distribution
* Safe paralleling

Applications

* Photovoltaic inverters
* Power factor correction
* Welding

STGFW30H65FB Distributors

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IGBT STMicroelectronics
STMicroelectronics STGFW30H65FB-like datasheet