STGFW20V60F Datasheet - STMicroelectronics

STGFW20V60F IGBT

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the posit.

STGFW20V60F Features

* Maximum junction temperature: TJ = 175 °C

* Tail-less switching off

* VCE(sat) = 1.8 V (typ.) @ IC = 20 A

* Tight parameter distribution

* Safe paralleling

* Low thermal resistance Applications

* Photovoltaic inverters

* Uninterruptib

STGFW20V60F Datasheet (482.81 KB)