STL20NM20N Datasheet - STMicroelectronics

STL20NM20N N-CHANNEL MOSFET

This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given onresistance.Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications.

STL20NM20N Features

* VDSS 200 V RDS(on) < 0.105 Ω ID 20 A Figure 1: Package TYPE STL20NM20N s s s s s s s s WORLDWIDE LOWEST GATE CHARGE TYPICAL RDS(on) = 0.088Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX) VERY LOW THERMAL RESISTANCE LOW GATE RESISTANCE LOW INPUT CAPACITANCE HIGH dv/dt and AVAL

STL20NM20N_STMicroelectronics.pdf