STL25N60M2-EP Datasheet (STMicroelectronics)

STL25N60M2-EP, N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suit

STL25N60M2-EP Features

* Order code VDS @ TJmax RDS(on) max. ID 5 STL25N60M2-EP 650 V 0.206 Ω 16 A 4 32 1 PowerFLAT™ 8x8 HV Figure 1: Internal schematic diagram

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested